Symposium B

Surface, Interface and Thin Film Growth

The participants of this symposium will communicate and discuss the recent progress in the understanding of the physical properties and phenomena of surfaces, interfaces and thin films involved in material growth, processing and application. Such understanding is essential to the search for effective surface and interface engineering approaches to improve material quality and device performance. This symposium will accommodate sessions on the analysis of surfaces, interfaces, supported nanomaterials and thin-films, characterization and control of vacuum-based material growth and processing, and their applications to materials used in electronics, spintronics, optoelectronics and heterogeneous catalysis.

  • Characterization of surfaces, interfaces and thin films;
  • Understanding and control of surface processes in vacuum-based material growth processes such as MBE, ALD, PLD, PECVD;
  • Understanding and control the morphology and size in supported nanostructural self-assembly;
  • Surface experimental studies (e.g. STM/STS, ARPES) of novel materials (topological insulators, superconductors, magnetic films, 2D materials);
  • Interface engineering for molecular and organic electronics;
  • Metal contacts and dielectrics in conventional and 2D semiconductors;
  • Surface/interface issues in heterogeneous catalysis, electrocatalysis, photocatalysis
  • New developments in experimental and computational techniques.
  • Mingshu CHEN, Xiamen University, China
  • Lan CHEN, Institute of Physics, China
  • Miaofang CHI, Oak Ridge National Laboratory, USA
  • Mark EDMONDS, School of Physics and Astronomy, Monash University, Australia
  • Hong-Jun GAO, Institute of Physics, China
  • Yukio HASEGAWA, University of Tokyo, Japan
  • Junjun JIA, Waseda University, Japan
  • Shao-chun LI, Nanjing University, China
  • Yunhao LU, ZheJiang University, China
  • Utkur M. MIRSAIDOV, National University of Singapore, Singapore
  • Aitor MUGARZA, Institut Catal√† de Nanoci√®ncia i Nanotecnologia (ICN2), Spain
  • Chih-Kang SHIH, University of Texas at Austin, USA
  • Aloysius SOON, Yonsei University, Korea
  • Kimberly Dick THELANDER, Lund University, Sweden
  • Yeliang WANG, Beijing Institute of Technology, China
  • Feng YANG, Southern University of Science and Technology, China
  • Junji YUHARA, Nagoya University, Japan
  • Chendong ZHANG, Wuhan University, China
  • Jiong ZHAO, Hong Kong Polytechnic University, Hong Kong, China
  • Wu ZHOU, University of Chinese Academy of Sciences, China


Xuesen Wang
National University of Singapore, Singapore

Shi Jie Wang
Institute of Materials Research & Engineering, A*STAR, Singapore


Jiong Lu
National University of Singapore, Singapore


Xuesen Wang
National University of Singapore, Singapore

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